1 材料与方法
1.1 材料
1.2 方法
表1 本研究所用PCR引物Tab. 1 PCR primers used in this study |
| 引物名称Primer name | 引物序列(5′-3′)Primer sequence (5′-3′) | 用途Application |
|---|---|---|
| MK3-15-1LP | TAAACGCTGGACTCAACCATC | genotyping |
| MK3-15-1RP | TTATGTCACCGGAGGTAGCAC | genotyping |
| MK3-15-2LP | AGTTTGGTATCGGGTAGGGTG | genotyping |
| MK3-15-2RP | TTGGGGTGTACGGTGATAGAG | genotyping |
| MK3-15-3LP | AGTTTGGTATCGGGTAGGGTG | genotyping |
| MK3-15-3RP | GGTTTGGTTATCGGAGAAAGG | genotyping |
| LBb1.3 | ATTTTGCCGATTTCGGAAC | genotyping |
| MK3-15-QF | TCACATCATCACAAGTCTTTGCTT | qPCR |
| MK3-15-QR | AAGTGAGACAGTAGCTGTTGAGC | qPCR |
2 结果与分析
2.1 橡胶树MAPKKK基因与拟南芥MAPKKK15基因序列比对
2.2 鉴定mapkkk15纯合突变体
图3 纯合突变体的鉴定A:mapkkk15突变体T-DNA插入位置示意图;B:mapkkk15突变体DNA水平的鉴定(数字表示拟南芥突变体单株);C:mapkkk15突变体转录水平的鉴定;M:DL2000 marker;**表示差异极显著(P<0.01)。 Fig. 3 Identification of homozygous mutant A: Schematic diagram of the position of the T-DNA insertion for mapkkk15; B: Identification of mapkkk15 mutant at DNA level (Numbers represent the Arabidopsis individual mutants); C: Identification of mapkkk15 mutant at transcription level; M: DL2000 marker; ** denotes extremely significant difference (P<0.01). |
2.3 低温胁迫下mapkkk15突变体表型分析
图4 mapkkk15突变体低温胁迫抗性增强A:低温胁迫下AtMAPKKK15基因的表达模式;B:低温胁迫后的拟南芥表型;C:低温胁迫下拟南芥叶片电解质渗漏率;**表示差异极显著(P<0.01)。 Fig. 4 The mapkkk15 mutants were more resistant to low temperature stress than wild-type Arabidopsis A: Expression profiles of AtMAPKKK15 under low temperature stress; B: Phenotypes of Arabidopsis after low temperature stress; C: Electrolyte leakage percentage of Arabidopsis leaves under low temperature stress; ** denotes extremely significant difference (P<0.01). |
